Xingyu Yang, Yuling Fan

(School of Mechanics and Optoelectronics Physics, Anhui University of Science and Technology)

Abstract：

Firstly, the application of deep level transient spectroscopy (DLTS) technology in the microscopic analysis of irradiation damage in GaAs, GaInP, and multi junction solar cells is introduced. Then, the role of DLTS technology in the influence of annealing on the main traps in GaAs and GaInP is reviewed. Finally, the application of DLTS, time-resolved photoluminescence spectroscopy (TRPL), photoluminescence spectroscopy (PL) and computer simulation simulation in subsequent research is summarized. This can provide reference for the study of particle irradiation induced defect generation and its impact mechanism in solar cells.

Key Words：

deep level transient spectrum; defects; radiation damage; III-V solar cells; damage mechanism