Yang Hongxia
School of Straits Flexible Electronics (Future Technology), Fujian Normal University
Abstract：
Metal halide perovskites have demonstrated tremendous application potential in the field of light-emitting diodes due to their excellent carrier transport properties, tunable bandgap, high color purity, and low-temperature solution processing capabilities. In recent years, perovskite light-emitting diodes (PeLEDs) have seen rapid development in the visible-near-infrared wavelength range, with external quantum efficiencies exceeding 30%, making them a key research direction for next-generation light-emitting displays and lighting devices. However, traditional high-performance perovskite light-emitting materials are predominantly lead-based, and the biological toxicity and environmental risks associated with lead have, to some extent, limited their further application. Therefore, the development of low-toxicity, environmentally friendly lead-free or low-lead alternative materials has become a key focus in perovskite optoelectronic device research. Tin (Sn), a member of the same group as lead (Pb), possesses a similar electronic configuration and crystallochemical characteristics. It can form stable perovskite crystal structures and exhibits a narrower bandgap, superior charge transport capabilities, and an energy level structure more suitable for near-infrared emission, making it one of the most promising lead-replacement systems. Compared to lead-based perovskites, Sn2+ in tin-based perovskites readily oxidizes to Sn4+, forming vacancy defects that accelerate non-radiative recombination. This leads to poor film crystallinity, low luminous efficiency, and insufficient device stability—issues that severely hinder the development of tin-based PeLEDs. To address these challenges, researchers have conducted extensive work in areas such as material composition design, precursor chemical regulation, control of crystallization kinetics, construction of low-dimensional structures, defect passivation, interface engineering, and device structure optimization, significantly advancing the performance of tin-based PeLEDs. This paper introduces tin-based perovskite materials and the luminescence mechanism of PeLEDs, followed by a systematic review of research progress on all-inorganic CsSnI3 tin-based perovskite light-emitting diodes. It also summarizes and outlines future trends in this field, providing a reference for the design and fabrication of highly efficient and stable tin-based PeLEDs.
Key Words：
tin-based perovskite; near-infrared light-emitting diode; defect passivation; crystal growth control; interface engineering
